High Quality Monolayer Graphene Synthesized by Resistive Heating Cold Wall Chemical Vapor Deposition

DOI: 10.1002/adma.201501600 CVD, as well as on its quality and suitability for fl exible electronic applications. Therefore, understanding the growth and properties of graphene obtained with cold-wall CVD is imperative to enable the exploitation of this material and facilitate the birth of novel graphene-based applications. Here we report a completely new mechanism for the growth of graphene by resistively heated stage cold-wall CVD which is markedly different from the growth mechanism of graphene in a hot-wall CVD. Through a combined study of Raman spectroscopy, atomic force microscopy (AFM), and scanning electron microscopy (SEM) we elucidate the early stage formation of graphene by monitoring the transition from disordered carbon adsorbed on Cu to graphene. We also demonstrate for the fi rst time (1) high-throughput production, (2) ultralow cost, and (3) high quality monolayer graphene grown on Cu foils by resistively heated stage cold-wall CVD. Our technique merges short deposition time (approximately few minutes) with high-effi ciency heating of a cold-wall CVD system, resulting in ≈99% reduction in graphene production cost. The Raman spectra of our graphene fi lms shows a low defect related peak and in devices with an area of 5600 μm 2 fabricated on standard SiO 2 substrates we measure a charge carrier mobility of 3300 cm 2 V −1 s −1 and the quantum Hall Effect typical of single layer graphene. In contrast, the quality of graphene grown by hot-wall CVD is often gauged only by carrier mobility, [ 1,2,4,5,21–23 ]